amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc968 v01.0211 general description features functional diagram the hm c968 is a 4 stage gaas p hem t mmi c 1 w att p ower amplifer which operates between 37 and 40 g h z. the hm c968 provides 21 db of gain, +32 dbm of saturated output power, and 15% p a e from a +6v supply. w ith a very good ip 3 performance of +38 dbm, the hm c968 is ideal for linear applications including point-to-point and point-to-multi-point ra- dios. all data is taken with the chip in a 50 o hm test fxture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. s aturated o utput p ower: +32 dbm @ 15% p a e h igh o utput ip 3: +38 dbm h igh gain: 21 db dc s upply: +6v @ 900 ma n o e xternal m atching r equired die s ize: 2.76 x 2.33 x 0.1 mm electrical specifcations t a = +25 c, vdd = vdd1 = vdd2 = vdd3 = vdd4 = vdd5 = +6v, idd = 900 ma [1] typical applications the hm c968 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat & satcom ? military & space p arameter m in. typ. m ax. units f requency r ange 37 - 40 g h z gain 19 22 db gain variation o ver temperature 0.03 db/ c i nput r eturn l oss 17 db o utput r eturn l oss 14 db o utput p ower for 1 db compression ( p 1db) 30.5 dbm s aturated o utput p ower ( p sat) 32 dbm o utput third o rder i ntercept ( ip 3) [2] 38 dbm total s upply current ( i dd) 900 ma [1] adjust vgg between -2 to 0v to achieve i dd = 900 ma typical. [2] m easurement taken at +6v @ 900 ma, p out / tone = +20 dbm gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature p1db vs. temperature p1db vs. supply voltage hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz -30 -20 -10 0 10 20 30 35 36 37 38 39 40 41 42 s21 s11 s22 frequency (ghz) response (db) 10 14 18 22 26 30 36 37 38 39 40 41 +25c +85c -55c frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 36 37 38 39 40 41 +25c +85c -55c frequency (ghz) return loss (db) -30 -25 -20 -15 -10 -5 0 36 37 38 39 40 41 +25c +85c -55c frequency (ghz) return loss (db) 24 26 28 30 32 34 36 37 38 39 40 +25c +85c -55c frequency (ghz) p1db (dbm) 24 26 28 30 32 34 36 37 38 39 40 5.0v 5.5v 6.0v frequency (ghz) p1db (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output ip3 vs. supply current, pout/tone = +20 dbm output ip3 vs. temperature, pout/tone = +20 dbm psat vs. supply current (idd) p1db vs. supply current (idd) hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz 24 26 28 30 32 34 36 37 38 39 40 800ma 900ma 1000ma frequency (ghz) p1db (dbm) 25 30 35 40 45 37 38 39 40 +25c +85c -55c frequency (ghz) ip3 (dbm) 24 26 28 30 32 34 36 37 38 39 40 800ma 900ma 1000ma frequency (ghz) psat (dbm) 25 30 35 40 45 37 38 39 40 800ma 900ma 1000ma frequency (ghz) ip3 (dbm) psat vs. temperature psat vs. supply voltage 24 26 28 30 32 34 36 37 38 39 40 +25c +85c -55c frequency (ghz) psat (dbm) 24 26 28 30 32 34 36 37 38 39 40 5.0v 5.5v 6.0v frequency (ghz) psat (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 25 30 35 40 45 37 38 39 40 5.0v 5.5v 6.0v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 10 12 14 16 18 20 22 24 37 ghz 38 ghz 39 ghz 40 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 10 12 14 16 18 20 22 24 37 ghz 38 ghz 39 ghz 40 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 10 12 14 16 18 20 22 24 37 ghz 38 ghz 39 ghz 40 ghz pout/tone (dbm) im3 (dbc) hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz power compression @ 38 ghz power compression @ 39 ghz output ip3 vs. supply voltage, pout/tone = +20 dbm output im3 @ vdd = +5.5v output im3 @ vdd = +6v output im3 @ vdd = +5v 0 5 10 15 20 25 30 35 40 0 3 6 9 12 15 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 0 5 10 15 20 25 30 35 40 0 3 6 9 12 15 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%)
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz absolute maximum ratings drain bias voltage (vdd) +7v rf i nput p ower ( rfin ) +20 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 15.5 m w /c above 85 c) 6.45 w thermal r esistance (channel to die bottom) 10.1 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) idd (ma) +5.0 900 +5.5 900 +6.0 900 note: amplifer will operate over full voltage ranges shown above with vgg adjusted to achieve idd = 900 ma typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions power dissipation gain & power vs. supply current @ 38 ghz gain & power vs. supply voltage @ 38 ghz reverse isolation vs. temperature -60 -50 -40 -30 -20 -10 0 36 37 38 39 40 41 +25c +85c -55c frequency (ghz) isolation (db) 15 20 25 30 35 40 5 5.5 6 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 15 20 25 30 35 40 800 900 1000 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 37ghz 38ghz 39ghz 40ghz power dissipation (w) input power (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz outline drawing no t es : 1. a ll d imensions a re in in c hes [ mm ] 2. d ie t hi ck ness is .004 3. ty pi ca l b on d p ad is 0.0026 [0.066] s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 8. ov er a ll d ie si z e .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
amplifiers - l ine a r & p ower - chip 3 3 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com application circuit 1 hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz p ad n umber f unction description i nterface s chematic 1 rfin this pad is ac coupled and matched to 50 o hms. 2, 6 vgg1 gate control for amplifer. e xternal bypass capacitors of 100 p f , 0.01 f , and 4.7 f are required on the pad that is used. 3, 5 vdd1, vdd2 drain bias voltage for amplifer. e xternal bypass capacitors of 100 p f , 0.01 f and 4.7 f are required on each pad. 4 rfo ut this pad is ac coupled and matched to 50 o hms. die bottom g n d die bottom must be connected to rf /dc ground. pad descriptions
amplifiers - l ine a r & p ower - chip 3 3 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com application circuit 2 hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 9 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz assembly diagram
amplifiers - l ine a r & p ower - chip 3 3 - 10 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc968 v01.0211 gaas phemt mmic 1 watt power amplifier, 37 - 40 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against > 250v es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
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